P-type doping with arsenic in (211)B HgCdTe grown by MBE

Journal of Electronic Materials

Volumn 25, Issue 8, 1996, Pages 1300-1305

  Wijewarnasuriya, P S ^a   Yoo, S S ^a   Faurie, J P ^a   Sivananthan, S ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

Arsenic; Arsenic planar doping; Diffusion; HgCdTe; Ion implanted

Indexed keywords

EID: 0012299881     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02655023     Document Type: Article

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