Effect of processing on surface roughness for a negative-tone chemically amplified resist exposed by x-ray lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3333, Issue , 1998, Pages 916-923

  Reynolds, Geoffrey W ^a   Taylor, James W ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

Chemically amplified photoresist; Developer additives; Dissolution; Novolak; Phenolic polymer; Quaternary ammonium salt; Sidewall roughness; Top surface roughness

Indexed keywords

AMINES; AMMONIUM COMPOUNDS; DISSOLUTION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; METAL ANALYSIS; PHENOLIC RESINS; PHENOLS; PHOTORESISTORS; SALTS; SURFACE PROPERTIES; SURFACE ROUGHNESS; SURFACE TREATMENT;

CHEMICALLY-AMPLIFIED PHOTORESIST; DEVELOPER ADDITIVES; NOVOLAK; PHENOLIC POLYMER; QUATERNARY AMMONIUM SALT; SIDEWALL ROUGHNESS;

PHOTORESISTS;

EID: 0001726324     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312477     Document Type: Conference Paper

References (15)

1. T. Yoshimura, H. Shriaishi, J. Yamamoto, and S. Okazaki, "Correlation of nano edge roughness in resist patterns with base polymers," Jpn. J. Appl. Phys. 32, pp. 6065-6070, 1993.
2. E. Scheckler, T. Ogawa, T. Yoshimura, S. Shukuri, and E. Takeda, "Molecular-scale models for simulation of nanometer lithography with applications to a negative chemical amplification resist," 1993 Symposium on VLSI Technology Digest of Technical Papers, pp. 149-150, Business Center for Academic Societies Japan, Tokyo, 1993.
3. E. Scheckler, T. Ogawa, T. Tanaka, H. Oizumi, and E. Takeda, "Simulation of AZ-PN100 resist pattern fluctuation in X-ray lithography, including synchrotron beam polarization," Jpn. J. Appl. Phys. 32 12(B), pp. 5951-5959, 1993.
4. Y. Martin, and H. K. Wickramasinghe, "Method for imaging sidewalls by atomic force microscopy," Appl. Phys. Lett. 64 (19), pp. 2498-2500, 1994.
5. A. Sato, Y. Tsukamoto, M. Baba, and S. Matsui, "Measurement of sidewall roughness by scanning tunneling microscope," Jap. J. Appl. Phys., 30 (11B), pp. 3298-3301, 1991.
6. th International Conference on Photopolymers, 1997, In press.
7. J. Taylor, P. Dentinger, S. Rhyner, and G. Reynolds, "Exploration of chemically-amplified resist mechanisms at small linewidths," ACS Symposium on Polymer Science and Engineering, 1997, In press.
8. C. Gamsky, Ph.D. Dissertation, University of Wisconsin-Madison, 1995.
9. P. Dentinger, C. Nelson, S. Rhyner, J. Taylor, T. Fedynyshyn, and M. Cronin, "Resist application effects on chemically amplified resist response," JVST B, 14 (6), pp. 4239-4245, 1996.
10. Private communication, Paul Dentinger, University of Wisconsin Madison.
11. P. Tsiartas, L. Flanagin, C. Henderson, W. Hinsberg, I. Sanchez, R. Bonnecaze, and C. G. Willson, "The mechanism of phenolic polymer dissolution: a new perspective," Macromolecules, 30, pp. 4656-4664, 1997.
12. A. Reiser, H. Shih, T. Yeh, and J. Huang, "Novolak-diazoquinone resists: the imaging system of the computer chip," Angew. Chem. Int. Ed. Engl. 35, pp. 2428-2440, 1996.
13. J. Huang, T. Kwei, and A. Reiser, "On the dissolution of novolak in aqueous alkali," Macromolecules, 22, pp. 4106-4112, 1989.
14. C. Henderson, P. Tsiartas, L. Simpson, K. Clayton, S. Pancholi, A. Pawloski, and C. G. Willson, "Factors affecting the dissolution rate of novolac resins II: developer composition effects," Advances in Resist Technology and Processing, Kunz, R., Ed., Proc SPIE Vol. 2724, pp. 481-490, SPIE Press, Bellingham WA, 1996.
15. R. Arcus, "Basis for processing difference between Positive photoresist developers: quaternary alkyl ammonium hydroxide and alkali metal hydroxide," Proc. Kodak Microelectronisc Seminar, Interface 1985, pp. 25-32, San Diego, November 1985.