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Volumn 32, Issue 12 S, 1993, Pages 5951-5959
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Simulation Of Az-Pn100 Resist Pattern Fluctuation In X-Ray Lithography, Including Synchrotron Beam Polarization
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Author keywords
Chemical amplification resist; Process simulation; X ray lithography
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Indexed keywords
CHEMICAL MODIFICATION;
ELECTROMAGNETIC WAVE POLARIZATION;
ELECTRON SCATTERING;
INFRARED SPECTROSCOPY;
INTEGRATED CIRCUIT MANUFACTURE;
MATHEMATICAL MODELS;
MONTE CARLO METHODS;
PHOTORESISTS;
POLYMERS;
SURFACE PROPERTIES;
SYNCHROTRON RADIATION;
ULSI CIRCUITS;
ACID CATALYST RANDOM WALK MODEL;
BEAM POLARIZATION EFFECT;
CHEMICAL AMPLIFICATION RESIST;
POST EXPOSURE BAKE;
PROCESS SIMULATION;
RESIST PATTERN FLUCTUATION;
X RAY LITHOGRAPHY;
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EID: 0027891662
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.32.5951 Document Type: Article |
Times cited : (9)
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References (37)
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