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F. Capasso, C. Gmachl, A. Tredicucci, D. L. Sivco, A. L. Hutchinson, and A. Y. Cho, Opt. Photonics News 10, 31 (1999).
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Capasso, F.1
Gmachl, C.2
Tredicucci, A.3
Sivco, D.L.4
Hutchinson, A.L.5
Cho, A.Y.6
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2
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0028304539
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J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson, and A. Y. Cho, Science 264, 553 (1994).
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Faist, J.1
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Cho, A.Y.6
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3
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0031547954
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G. Scamarcio, F. Capasso, C. Sirtori, J. Faist, A. L. Hutchinson, D. L. Sivco, and A. Y. Cho, Science 276, 773 (1997).
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Scamarcio, G.1
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Faist, J.4
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Sivco, D.L.6
Cho, A.Y.7
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4
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0033124015
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F. Capasso, A. Tredicucci, C. Gmachl, D. L. Sivco, A. L. Hutchinson, A. Y. Cho, and G. Scamarcio, IEEE J. Sel. Top. Quantum Electron. 5, 792 (1999).
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Capasso, F.1
Tredicucci, A.2
Gmachl, C.3
Sivco, D.L.4
Hutchinson, A.L.5
Cho, A.Y.6
Scamarcio, G.7
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5
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0033123903
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C. Gmachl, F. Capasso, A. Tredicucci, D. L. Sivco, R. Köhler, A. L. Hutchinson, and A. Y. Cho, IEEE J. Sel. Top. Quantum Electron. 5, 808 (1999).
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Gmachl, C.1
Capasso, F.2
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Sivco, D.L.4
Köhler, R.5
Hutchinson, A.L.6
Cho, A.Y.7
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7
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4243988165
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J. Shah, A. Pinczuk, A. C. Gossard, and W. Wiegmann, Phys. Rev. Lett. 54, 2045 (1985).
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Shah, J.1
Pinczuk, A.2
Gossard, A.C.3
Wiegmann, W.4
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8
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85037510638
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note
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For the In mole fractions, we used the values x = 0.55 and y = 0.49, assessed by x-ray diffraction and Raman scattering characterizations. These values, slightly different from lattice matched ones, correspond to a practically negligible 0.3% strain.
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9
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0345782326
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World Scientific, Singapore
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G. Scamarcio, M. Troccoli, F. Capasso, A. L. Hutchinson, D. L. Sivco, and A. Y. Cho, Proceedings of the 24th International Conference on the Physics of Semiconductors (ICPS 24) (World Scientific, Singapore, 1998).
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(1998)
Proceedings of the 24th International Conference on the Physics of Semiconductors (ICPS 24)
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Scamarcio, G.1
Troccoli, M.2
Capasso, F.3
Hutchinson, A.L.4
Sivco, D.L.5
Cho, A.Y.6
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10
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0032069211
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A. Tredicucci, F. Capasso, C. Gmachl, D. L. Sivco, A. L. Hutchinson, A. Y. Cho, J. Faist, and G. Scamarcio, Appl. Phys. Lett. 72, 2388 (1998).
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Tredicucci, A.1
Capasso, F.2
Gmachl, C.3
Sivco, D.L.4
Hutchinson, A.L.5
Cho, A.Y.6
Faist, J.7
Scamarcio, G.8
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11
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85037516146
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note
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The samples were processed into 150-μm-diam mesas with alloyed ohmic contacts. The substrate was wedged at 45° to facilitate light collection. The devices, indium soldered onto copper holders and mounted into a closed-cycle He cryostat with ZnSe windows, were voltage driven at 40 kHz with 50% duty cycle. Midinfrared electroluminescence spectra were collected with an FTIR spectrometer operating in the step scan and lock-in mode, using ZnSe f/1 optics and a cooled HgCdTe detector.
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12
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0000001055
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G. Scamarcio, F. Capasso, J. Faist, C. Sirtori, D. L. Sivco, A. L. Hutchinson, and A. Y. Cho, Appl. Phys. Lett. 70, 1796 (1997).
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(1997)
Appl. Phys. Lett.
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Scamarcio, G.1
Capasso, F.2
Faist, J.3
Sirtori, C.4
Sivco, D.L.5
Hutchinson, A.L.6
Cho, A.Y.7
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