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Journal of Crystal Growth

Volumn 197, Issue 4, 1999, Pages 805-810

MOVPE growth of ZnS on (1 0 0)GaAs using dimethylzinc and ditertiarybutyl sulphide precursors

(4) Thiandoume, C a Ka, O b Lusson, A a Gorochov, O a

a CNRS (France)

b UNIVERSITÉ CHEIKH ANTA DIOP (Senegal)

Author keywords

Dimethyl zinc precursor; Ditertiarybutyl sulphide precursor; II VI; MOVPE; Photoluminescence; X ray diffraction; ZnS

Indexed keywords

FILM GROWTH; GLASS TRANSITION; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; PARTIAL PRESSURE; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SULFUR COMPOUNDS; THERMAL EFFECTS;

DIMETHYLZINC; DITERTIARYBUTYL SULFIDE; ZINC SULFIDE;

SEMICONDUCTING FILMS;

EID: 0033097836 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00952-X Document Type: Article

Times cited : (8)

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