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Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 257-260

Low-resistivity p-type ZnSe, ZnSSe and MgZnSSe grown by gas-source molecular beam epitaxy

(8) Imaizumi, M a Kuroki, H a Endoh, Y a Suita, M a Ohtsuka, K a Isu, T a Namizaki, H a Nunoshita, M a

a MITSUBISHI ELECTRIC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL ACTIVATION; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; HYDRIDES; MOLECULAR BEAM EPITAXY; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

ACCEPTOR CONCENTRATION; ACCEPTORS; GAS SOURCE MOLECULAR BEAM EPITAXY; NITROGEN ACTIVATION;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030562144 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00571-4 Document Type: Article

Times cited : (9)

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