35 nm metal gate SOI-p-MOSFETs with PtSi Schottky source/drain

Annual Device Research Conference Digest

Volumn , Issue , 1999, Pages 30-31

  Saitoh, W ^a   Yamagami, S ^a   Itoh, A ^a   Asada, M ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON BEAM LITHOGRAPHY; MESFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

SCHOTTKY SOURCE/DRAIN;

MOSFET DEVICES;

EID: 0033365936     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)