Aluminum back-surface field doping profiles with surface recombination velocities below 200 cm per second

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 1993, Pages 236-242

  Lolgen, P ^a   Leguijt, C ^a   Eikelboom, J A ^a   Steeman, R A ^a   Sinke, W C ^a   Verhoef, L A ^a   Alkemade, P F A ^a   Algra, E ^a  

^a FOM INSTITUTE AMOLF   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; DOPING (ADDITIVES); SILICON;

ALUMINUM BACK-SURFACE FIELD DOPING PROFILE; ALUMINUM DOPING PROFILES; SILICON SOLAR CELL DIFFUSION PROFILES; SURFACE RECOMBINATION VELOCITIES;

SILICON SOLAR CELLS;

EID: 0027856949     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)