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Volumn , Issue , 1982, Pages 1237-1242

HIGH CHARGE DENSITIES IN Si-NITRIDE AND THEIR EFFECT ON THE INVERSION LAYER MOBILITY OF SILICON MIS/IL SOLAR CELLS.

(1)  Hezel, Rudolf a  

a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DENSITY; INVERSION LAYER MOBILITY; MIS DEVICES; SHEET RESISTANCE; SILICON NITRIDE;

EID: 0020295019     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (8)

References (0)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.