Thermal stability of engineered Schottky barriers in Al/Si/GaAs(001) diodes

Applied Physics Letters

Volumn 69, Issue 13, 1996, Pages 1927-1929

  Sorba, L ^a,b,d   Yildirim, S ^a,b   Lazzarino, M ^a,b   Franciosi, A ^a,b,e   Chiola, D ^c   Beltram, F ^c  

^a INFM   (Italy)

^b University of Minnesota   (United States)

^c SCUOLA NORMALE SUPERIORE   (Italy)

^d CNR   (Italy)

^e UNIVERSITY OF TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ELECTRIC VARIABLES MEASUREMENT; FILM GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACE DIPOLE; OVERLAYERS; SCHOTTKY BARRIERS;

SCHOTTKY BARRIER DIODES;

EID: 0030247952     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117624     Document Type: Article

References (13)

1. M. Cantile, L. Sorba, S. Yildirim, P. Faraci, G. Biasiol, A. Franciosi, T. J. Miller, and M. I. Nathan, Appl. Phys. Lett. 64, 988 (1994).
2. M. Cantile, L. Sorba, P. Faraci, S. Yildirim, G. Biasiol, G. Bratina, A. Franciosi, T. J. Miller, M. I. Nathan, and L. Tapfer, J. Vac. Sci. Technol. B 12, 2653 (1994).
3. C. Berthod, N. Binggeli, and A. Baldereschi, Europhys. Lett, (in press).
4. L. Sorba, J. J. Paggel, and A. Franciosi, J. Vac. Sci. Technol. B (in press).
5. A. Franciosi and C. G. Van de Walle, Surf. Sci. Reports 214, 1 (1996).
6. -3, the I-V barrier values were corrected to compensate for the tunneling contribution according to the scheme proposed by J. M. Shanon, Solid-State Electron 19, 537 (1976). To implement the correction (∼100 meV), we considered a triangular potential profile with an image force correction on the semiconductor side of the junction.
7. J. O. McCaldin and H. Sankur, Appl. Phys. Lett. 19, 524 (1971); K. Kino, Solid-State Electron. 16, 119 (1973).
8. J. O. McCaldin and H. Sankur, Appl. Phys. Lett. 19, 524 (1971); K. Kino, Solid-State Electron. 16, 119 (1973).
9. Binary Alloy Phase Diagrams, edited by H. Okamoto, P. R. Subramanian, and L. Kacprzak, 2nd Ed. (W. W. Scott, Jr., 1990), pp. 211 and 317, Vol. 1.
10. N. M. Johnson, T. J. Magee, and J. Peng, J. Vac. Sci. Technol. 13, 838 (1976); A. Bosacchi, S. Franchi, E. Gombia, R. Mosca, F. Fantini, R. Menozzi, and S. Naccarella, Electron. Lett. 30, 820 (1004).
11. N. M. Johnson, T. J. Magee, and J. Peng, J. Vac. Sci. Technol. 13, 838 (1976); A. Bosacchi, S. Franchi, E. Gombia, R. Mosca, F. Fantini, R. Menozzi, and S. Naccarella, Electron. Lett. 30, 820 (1004).
12. W. Chen, M. Dumas, D. Mao, and A. Kahn, J. Vac. Sci. Technol. B 10, 1886 (1992); D. K. Biegelsen, R. D. Bringans, J. E. Northrup, and L.-E. Swartz, Phys. Rev. B 41, 5701 (1990).
13. W. Chen, M. Dumas, D. Mao, and A. Kahn, J. Vac. Sci. Technol. B 10, 1886 (1992); D. K. Biegelsen, R. D. Bringans, J. E. Northrup, and L.-E. Swartz, Phys. Rev. B 41, 5701 (1990).