Thermal stability of engineered Schottky barriers in Al/Si/GaAs(001) diodes

Applied Physics Letters

Volumn 69, Issue 13, 1996, Pages 1927-1929

  Sorba, L ^a,b,d   Yildirim, S ^a,b   Lazzarino, M ^a,b   Franciosi, A ^a,b,e   Chiola, D ^c   Beltram, F ^c  

^a INFM   (Italy)

^b University of Minnesota ^*  (United States)

^c SCUOLA NORMALE SUPERIORE   (Italy)

^d CNR   (Italy)

^e UNIVERSITY OF TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ELECTRIC VARIABLES MEASUREMENT; FILM GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACE DIPOLE; OVERLAYERS; SCHOTTKY BARRIERS;

SCHOTTKY BARRIER DIODES;

EID: 0030247952     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117624     Document Type: Article

References (13)

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