Uniform Ag thin film growth on an Sb-terminated Si(111) surface

ETRI Journal

Volumn 19, Issue 2, 1997, Pages 71-80

  Park, Kang Ho ^a   Ha, Jeong Sook ^a   Lee, El Hang ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; DENSITY (SPECIFIC GRAVITY); DIFFUSION IN SOLIDS; FILM GROWTH; GOLD; MONOLAYERS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING ANTIMONY; SEMICONDUCTING SILICON; SURFACE ACTIVE AGENTS;

UNIFORM THIN FILM GROWTH;

ULTRATHIN FILMS;

EID: 0031192110     PISSN: 12256463     EISSN: None     Source Type: Journal    
DOI: 10.4218/etrij.97.0197.0024     Document Type: Article

References (32)

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32. In our recent LEED study of Ag growth on 1 ML√3×√3 Sb/Si(111) surface at room temperature we observed weak Sb √3×√3 plus 1×1 pattern of slightly rotated Ag(111) islands from Si(111) orientation even in the 3 ML of Ag film.