Ultrafast resonant cavity enhanced Schottky photodiodes

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 1, Issue , 1997, Pages 160-161

  Gokkavas, M ^a   Onat, B M ^a   Ozbay, E ^a   Islam, M S ^a   Ata, E P ^a   Towe, E ^a   Tuttle, G ^a   Unlu, M S ^a  

^a BOSTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; COMPUTER SIMULATION; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; QUANTUM EFFICIENCY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SILICON NITRIDE; SPECTRUM ANALYSIS; ULTRAFAST PHENOMENA;

DISTRIBUTED BRAGG REFLECTORS (DBR); FULL WIDTH AT HALF MAXIMUM (FWHM); RESONANT CAVITY ENHANCED (RCE) DETECTORS;

PHOTODIODES;

EID: 0031372664     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)