The relationship between resistivity and boron doping concentration of single and polycrystalline diamond

Physica Status Solidi (A) Applied Research

Volumn 154, Issue 1, 1996, Pages 385-393

  Werner, M ^a   Job, R ^b   Zaitzev, A ^b   Fahrner, W R ^b   Seifert, W ^c   Johnston, C ^d   Chalker, P R ^d  

^a VDI/VDE IT   (Germany)

^b UNIVERSITY OF HAGEN   (Germany)

^c UNIVERSITY OF APPLIED SCIENCES   (Germany)

^d RICARDO UK LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CONDUCTIVITY; ELECTRIC CONDUCTIVITY MEASUREMENT; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SPECTROSCOPY;

GRAIN BOUNDARY EFFECTS; HALL MEASUREMENT; IMPURITY BAND CONDUCTION; POLYCRYSTALLINE DIAMOND FILMS; SECONDARY ION MASS SPECTROSCOPY; SPREADING RESISTANCE;

DIAMOND FILMS;

EID: 0030109961     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.2211540127     Document Type: Article

References (24)

1. K. SHENAI, R. S. SCOTT, and B. J. BALIGA, IEEE Trans. Electron Devices 36, 1811 (1989).
2. G. BRAUNSTEIN and R. KALISH, J. appl. Phys. 54, 2106 (1983).
3. M. WERNER, O. DORSCH, H. U. BAERWIND, E. OBERMEIER, L. HAASE, W. SEIFERT, A. RINGHANDT, C. JOHNSTON, S. ROMANI, H. BISHOP, and P. R. CHALKER, Appl. Phys. Letters 64, 595 (1994).
4. A. S. VISHNEVSKII, A. G. GONTAR, V. I. TORISHNII, and A. SHULZHENKO, Soviet Phys. - Semicond. 15, 659 (1981).
5. M. WERNER, O. DORSCH, H. U. BAERWIND, E. OBERMEIER, C. JOHNSTON, P. R. CHALKER, and S. ROMANI, IEEE Trans. Electron Devices 42, 1344 (1995).
6. N. F. MOTT, Phil. Mag. 19, 835 (1969).
7. A. W. S. WILLIAMS, E. C. LIGHTOWLERS, and A. T. COLLINS, J. Phys. C 3, 1727 (1970).
8. K. NISHIMURA, K. DAS, and J. T. GLASS, J. appl. Phys. 69, 3142 (1991).
9. H. SHIOMI, Y. NISHIBAYASHI, and N. FUJIMORI, Japan. J. appl. Phys. 54, 2106 (1983).
10. P. I. BARANSKII, V. G. MALOGOLOVETS, V. I. TOHISHINII, and G. V. CHIPENKO, Soviet Phys. - Semicond. 21, 45 (1987).
11. A. T. COLLINS and E. C. LIGHTOWLERS, in: The Properties of Diamond, Ed. J. E. FIELD, Academic Press, New York 1979.
12. A. T. COLLINS and A. W. S. WILLIAMS, J. Phys. C 4, 1789 (1971).
13. N. FUJIMORI, T. IMAI, H. NAKAHATA, H. SHIOMI, and Y. NISHIBAYASHI, Mater. Res. Soc. Symp. Proc. 164, 23 (1990).
14. M. W. GEIS, Mater. Res. Soc. Symp. Proc. 164, 15 (1990).
15. K. OKANO, N. NARUKI, Y. AKIBA, T. KUOSU, M. IIDA, Y. HIROSE, and T. NAKAMURA, Japan. J. appl. Phys. 28, 1066 (1989).
16. B. MASSARANI, J. C. BOURGOIN, and R. M. CHRENKO, Phys. Rev. B 17, 1758 (1978).
17. E. M. CONWELL, Phys. Rev. 103, 51 (1956).
18. J. C. BOURGOIN, J. KRYNICKI, and B. BLANCHARD, phys. stat. sol. (a) 52, 293 (1979).
19. B. R. STONER, CHIEN-TEH KAO, D. M. MALTA, and R. C. GLASS, Appl. Phys. Letters 62, 2347 (1993).
20. J. A. WINDHEIM, V. VENKATESAN, D. M. MALTA, and K. DAS, J. electronic Mater. 22, 391 (1993).
21. N. FUJIMORI, H. NAKAHATA, and T. IMAI, Japan. J. appl. Phys. 29, 824 (1990).
22. S. A. GROT, Dissertation thesis, UMI Dissertation Information Service, Order Number 9236833, 1992.
23. K. OKANO, H. NARUKI, Y. AKIBA, T. KUROSU, M. IIDA, Y. HIROSE, and T. NAKAMURA, Japan. J. appl. Phys. 28, 1066 (1989).
24. T. SUGINO, K. KARASUTANI, H. KATAOKA, K. KOBASHI, and J. SHIRAFUJI, in: Advances in New Diamond Science and Technology, Ed. S. SAITO, N. FUJIMORI, O. FUKUNAGA, M. KAMO, K. KOBASHI, and M. YOSHIHAWA, MYU, Tokyo 1994 (p. 705).