Tantalum oxide films on silicon grown by tantalum evaporation in atomic oxygen

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 415-418

  Hudner, J ^a   Hellberg, P E ^a   Kusche, D ^a   Ohlsen H ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ERICSSON RADIO SYSTEMS AB   (Sweden)

Author keywords

Dielectric properties; Dielectrics; Evaporation; Plasma processing and deposition

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; DIELECTRIC MATERIALS; EVAPORATION; LEAKAGE CURRENTS; PERMITTIVITY MEASUREMENT; PLASMAS; SILICON; STOICHIOMETRY; TANTALUM COMPOUNDS; THIN FILMS;

ATOMIC OXYGEN PLASMA; PLASMA DEPOSITION; PLASMA PROCESSING; REACTIVE OXYGEN RADICALS; TANTALUM OXIDE; TANTALUM PENTOXIDE;

FILM GROWTH;

EID: 0030217609     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08667-1     Document Type: Article

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