45 Gbit/s AIGaAs/GaAs HEMT multiplexer IC

Electronics Letters

Volumn 33, Issue 7, 1997, Pages 589-590

  Lao, Z ^a   Nowotny, U ^a   Thiede, A ^a   Hurm, V ^a   Kaufel, G ^a   Rieger Motzer, M ^a   Bronner, W ^a   Seibel, J ^a   Hulsmann A ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

High electron mobility transistors; Integrated circuits; Multiplexing

Indexed keywords

ELECTRIC POWER SUPPLIES TO APPARATUS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TIME DIVISION MULTIPLEXING;

MULTIPLEXER CIRCUITS; POWER CONSUMPTION;

MULTIPLEXING EQUIPMENT;

EID: 0031098483     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970364     Document Type: Article

References (5)

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2. max AlGaAs/GaAs HBTs', Electron Lett., 1994, 30, (5), pp. 401-402
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4. RUNGE, K., PIERSON, R.L., ZAMPARDI, P.J., THOMAS, P.B., YU, J., and WANG, K.C.: '40Gbit/s AlGaAs/GaAs HBT 4:1 multiplexer IC', Electron Lett., 1995, 31, (11), pp. 876-877
5. HÜLSMANN, A., KAUFEL, G., KÖHLER, K., RAYNOR, B., SCHNEIDER, J., and JAKOBUS, T.: 'E-beam direct-write in a dry-etched recess gate HEMT process for GaAs/AlGaAs circuits', Jpn. J. Appl. Phys., 1990, 29, (10), pp. 2317-2320