Scanning tunneling microscopy/scanning tunneling spectroscopy observation of III-V compound semiconductor nanostructures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 6 SUPPL. B, 1996, Pages 3743-3748

  Noh, Joo Hyong ^a   Asahi, Hajime ^a   Kim, Seong Jin ^a   Takemoto, Minori ^a   Gonda, Shun Ichi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Composition modulation; GaAs; GaP InP short period superlattices; Gas source MBE; InAs; Self organized quantum structures; STM; STS

Indexed keywords

COMPOSITION; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WIRES; SEMICONDUCTOR SUPERLATTICES; SPECTROSCOPY;

BRIGHT STRIPES; COMPOSITION MODULATION; COMPOUND SEMICONDUCTOR NANOSTRUCTURES; DARK STRIPES; GAS SOURCE MOLECULAR BEAM EPITAXY; SCANNING TUNNELING SPECTROSCOPY; SELF ORGANIZED QUANTUM WIRE STRUCTURES;

NANOSTRUCTURED MATERIALS;

EID: 0030166312     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3743     Document Type: Article

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