The metalorganic chemical vapor deposition growth of AlAsSb and InAsSb/InAs using novel source materials for infrared emitters

Journal of Electronic Materials

Volumn 26, Issue 8, 1997, Pages 903-909

  Biefeld, R M ^a   Kurtz, S R ^a   Allerman, A A ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

InAsSb; Lasers; Metalorganic chemical vapor deposition (MOCVD); Mid infrared

Indexed keywords

EID: 0001427395     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0272-8     Document Type: Article

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