Incorporation and optical activation of Er in group III-N materials grown by metalorganic molecular-beam epitaxy

Materials Research Society Symposium - Proceedings

Volumn 468, Issue , 1997, Pages 123-129

  MacKenzie, J D ^a   Abernathy, C R ^a   Pearton, S J ^a   Donovan, S M ^a   Hommerich, U ^a   Thaik, M ^a   Wu, X ^a   Ren, F ^a   Wilson, R G ^a   Zavada, J M ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ERBIUM; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

OPTICAL ACTIVATION;

SEMICONDUCTOR GROWTH;

EID: 0030652437     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-468-123     Document Type: Conference Paper

References (25)