A tunneling field-effect transistor with 25 nm metallurgical channel length

Applied Physics Letters

Volumn 70, Issue 22, 1997, Pages 3005-3007

  Wang, Fu Cheng ^a   Zhang, W E ^a   Yang, C H ^a   Yang, M J ^b   Bennett, B R ^b   Wilson, R A ^c   Stone, D R ^c  

^a UNIVERSITY OF MARYLAND   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c LABORATORY FOR PHYSICAL SCIENCES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0043183300     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118731     Document Type: Article

References (7)

1. SIA Semiconductor Technology-Workshop Working Group Reports (Semiconductor Industry Association, 1994).
2. At zero gate length, the effective channel length remains finite, and is approximately 70 nm.
3. GaAs-based resonant-tunneling transistor: C. H. Yang, Y. C. Kao, and H. D. Shih, Appl. Phys. Lett. 55, 2742 (1989); and Si-based tunneling transistor: W. E. Zhang, F.-C. Wang, and C. H. Yang, IEEE Trans. Electron Devices ED-43, 1441 (1996).
4. GaAs-based resonant-tunneling transistor: C. H. Yang, Y. C. Kao, and H. D. Shih, Appl. Phys. Lett. 55, 2742 (1989); and Si-based tunneling transistor: W. E. Zhang, F.-C. Wang, and C. H. Yang, IEEE Trans. Electron Devices ED-43, 1441 (1996).
5. J. Chung, M.-C. Jeng, J. E. Moon, A. T. Wu, T. Y. Chan, P. K. Kuo, and C. Hu, IEEE Electron Device Lett. EDL-9, 186 (1988).
6. Calibrated against the NIST SEM Standard Reference Materials (SRM2090A), see B. L. Newell, M. T. Postek, and J. P. van der Ziel, J. Vac. Sci. Technol. B 13, 2671 (1995).
7. F.-C. Wang, W. E. Zhang, C. H. Yang, M. J. Yang, and B. R. Bennett, Appl. Phys. Lett. 69, 1417 (1996).