Two-dimensional plasma reactor simulation with self-consistent coupling of gas flow with plasma transport

Materials Science in Semiconductor Processing

Volumn 2, Issue 3, 1999, Pages 271-279

  Nam, Sang Ki ^a   Shin, Chee Burm ^a   Economou, Demetre J ^b  

^a Ajou University   (South Korea)

^b University of Houston   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001376347     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(99)00015-3     Document Type: Article

References (31)

1. Leiberman MA, Lichtenberg AJ. Principles of Plasma Discharges and Materials Processing. New York: John Wiley and Sons, 1994.
2. Meyyappan M. In: Mayyappan M, editor. Computational Modeling in Semiconductor Processing. Boston: Artech House, 1995 Chapter 5.
3. Porteous RK, Wu HM, Graves DB. Plasma Sources Sci Technol 1994;3:25.
4. Lymberopoulos DP, Economou DJ. J Vac Sci Technol 1994;A12:1229.
5. Stewart RA, Vitello P, Graves DB. J Vac Sci Technol 1995;B12:478.
6. Kushner MJ, Collison WZ, Grapperhaus MJ, Holland JP, Barnes MS. J Appl Phys 1996;80:1337.
7. Passchier JDP, Goedheer WJ. J Appl Phys 1993;74:3744.
8. Economou DJ, Feldsien J, Wise RS. In: Kortshagen U, Tsendin LD, editors. Electron Kinetics and Applications. New York: Plenum, 1998.
9. Aydil ES, Economou DJ. J Electrochem Soc 1993;140:1471.
10. Beale D, Siu S, Patrick R. J Vac Sci Technol 1998;B16:1059.
11. Bukowski JD, Graves DB, Vitello P. J Appl Phys 1996;80:2614.
12. Ventzek PLG, Grapperhaus M, Kushner MJ. J Vac Sci Technol 1994;B12:3118.
13. Meyyappan M, Govindan TR. J Appl Phys 1995;78:6432.
14. Bose D, Govindan TR, Meyyappan M. J Electrochem Soc 1999;146:2705.
15. Wise R, Lymberopoulos D, Economou DJ. Appl Phys Lett 1996;68:2499.
16. Economou DJ, Panagopoulos TL, Meyyappan M. Micro 1998;16(7):101.
17. Gorbatkin SM, Berry LA, Roberto JB. J Vac Sci Technol 1990;A8:2893.
18. Yasaka Y, Fukuyama A, Hatta A, Itatani R. J Appl Phys 1992;72:2652.
19. Koh WH, Choi NH, Choi DI, Oh YH. J Appl Phys 1993;73:4205.
20. Williamson MC, Lichtenberg AJ, Lieberman MA. J Appl Phys 1992;72:3924.
21. Hussein MA, Emmert GA, Hershkowitz N, Woods RC. J Appl Phys 1992;72:1720.
22. Weng Y, Kushner MJ. J Appl Phys 1992;72:33.
23. Lymberopoulos DP, Economou DJ. IEEE Trans Plasma Sci 1995;23:573.
24. Lymberopoulos DP, Economou DJ. J Appl Phys 1993;73:3668.
25. Hughes TJR. The Finite Element Method. Prentice-Hall, 1987.
26. Reddy JN. Int J Num Methods in Fluids 1982;2:151.
27. Sani RL, Gresho PM, Lee RL, Griffiths DF. Int J Num Methods in Fluids 1981;1:17.
28. Hopwood J, Asmussen J. Appl Phys Lett 1991;58:2473.
29. Tsu DV, Young RT, Ovshinsky SR, Klepper CC, Berry LA. J Vac Sci Technol 1995;A13:935.
30. King G, Sze FC, Mak P, Grotjohn TA, Asmussen J. J Vac Sci Technol 1992;A10:1265.
31. Wise RS, Lymberopoulos, Economou DJ. In: Mathad GS, Meyyappan M, Hess DW, editors. Proceedings of the 11th Plasma Processing Symposium [special issue]. The Electrochemical Society 1996;PV-96-12:11.