Wigner crystallization and a resonance exchange mechanism for electrons localized in an amorphous insulator with a high trap density

JETP Letters

Volumn 64, Issue 7, 1996, Pages 525-530

  Gritsenko, V A ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345474747     PISSN: 00213640     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.567229     Document Type: Article

References (9)

1. E. Wigner, Phys. Rev. 46, 1002 (1934).
2. T. Ando, A. Fowler, and F. Stern, Electronic properties of two-dimensional systems, Reviews of Modern Physics 54, No. 2, April 1992.
3. A. V. Chaplik, Zh. Éksp. Teor. Fiz 62, 746 (1972)
4. [Sov. Phys. JETP 35, 395 (1972)].
5. A. O. E. Animalu, Intermediate Quantum Theory of Crystalline Solids, Prentice-Hall, Inc., Englewood Cliffs, N. J., 1977.
6. V. A. Gritsenko, Structure and Electronic Structure of Amorphous Insulators in Silicon MIS Structures [in Russian], Novosibirsk, Nauka, 1993.
7. B. I. Shklovskiǐ and A. L. Éfros, Electronic Properties of Doped Semiconductors, Springer-Verlag, New York, 1984 [Russian original, Nauka, Moscow, 1979].
8. V. A. Gritsenko, S. P. Sinitsa, in Properties of Metal-Insulator-Semiconductor Structures [in Russian], Nauka, Moscow, 1976.
9. V. A. Gritsenko, Silicon Nitride in Electronics, Materials Science Monograph 34, Elsevier, North Holland, New York, 1988.