X-ray diffraction from low-dimensional structures

Semiconductor Science and Technology

Volumn 8, Issue 11, 1993, Pages 1915-1934

  Fewster, P F ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

LOW DIMENSIONAL STRUCTURES;

CRYSTALS; DIFFRACTION; MICROSTRUCTURE; SEMICONDUCTOR MATERIALS;

X RAY ANALYSIS;

EID: 0027701387     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/8/11/001     Document Type: Review

References (120)

1. Characterization of thin layers on perfect crystals with a multipurpose high resolution x-ray diffractometer
2. X-ray diffraction of multilayers and superlattices
3. Determination of epitaxic-layer composition and thickness by double-crystal X-ray diffraction
4. Sensitivity of X-ray diffractometry for strain depth profiling in III–V heterostructures
5. Precision lattice constant determination
6. Thickness measurement of thin films by x-ray absorption
7. LXXVIII.The theory of X-ray reflexion. Part II
8. Double-crystal spectrometer measurements of lattice parameters and X-ray topography on heterojunctions GaAs–AlxGa1−xAs
9. Interface roughness and period variations in MQW structures determined by X-ray diffraction
10. A high-resolution multiple-crystal multiple-reflection diffractometer
11. Characterization of quantum wells by X-ray diffraction
12. Interpretation of the diffuse scattering close to Bragg peaks by X-ray topography
13. The effect of silicon doping on the lattice parameter of gallium arsenide grown by liquid-phase epitaxy, vapour-phase epitaxy and gradient-freeze techniques
14. High-energy double-crystal X-ray diffraction
15. X-ray diffractometry of small defects in layered systems
16. X-Ray Analysis of Structural Defects in a Semiconductor Superlattice
17. Some aspects of the X-ray structural characterization of (Ga1−xAlxAs)n1(GaAs)n2/GaAs(001) superlattices
18. Combining four-crystal seven-reflection and three-crystal five-reflection diffractometry for the characterization of ZnSe layers grown on GaAs by MOVPE
19. Dilatation, density and nitrogen content in type Ia diamonds: previous work and proposed experiments
20. Accuracy in X-ray rocking-curve analysis as a necessary requirement for revealing vacancies and interstitials in regrown silicon layers amorphized by ion implantation
21. Dynamical theory of diffraction applicable to crystals with any kind of small distortion
22. The dynamic theory of X-ray diffraction by the one-dimensional ideal superlattice. I. Diffraction by the arbitrary superlattice