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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 5 A, 1999, Pages 2679-2685

Effects of annealing on type converted Si and space solar cells irradiated with heavy fluence 1 Me V electrons

(5) Khan, Aurangzeb a Yamaguchi, Masafumi a Taylor, Stephen J a Hisamatsu, Tadashi b Matsuda, Sumio b

a TOYOTA TECHNOLOGICAL INSTITUTE (Japan)

b JAPAN AEROSPACE EXPLORATION AGENCY (Japan)

Author keywords

DLTS; Heavy electron irradiation; Photovoltaic space power systems; Radiation damage; Si space solar cells; Type conversion

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON IRRADIATION; ELECTRON TRAPS; HOLE TRAPS; RADIATION DAMAGE; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

SPACE SOLAR CELLS;

SILICON SOLAR CELLS;

EID: 0032674769 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.2679 Document Type: Article

Times cited : (11)

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