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Volumn 87, Issue 12, 2000, Pages 8741-8746

Nitrogen and hydrogen in thick diamond films grown by microwave plasma enhanced chemical vapor deposition at variable H2 flow rates

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001183891     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373604     Document Type: Article
Times cited : (81)

References (29)
  • 6
  • 25
    • 0030404023 scopus 로고    scopus 로고
    • III-Nitride, SiC and Diamond Materials for Electronic Devices, edited by D. K. Gaskill, C. D. Brandt, and R. J. Nemanich, Materials Research Society, Pittsburg
    • A. V. Khomich, V. I. Polyakov, P. I. Perov, V. P. Varnin, I. G. Teremetskaya, V. G. Balakirev, and E. D. Obraztsova, in III-Nitride, SiC and Diamond Materials for Electronic Devices, edited by D. K. Gaskill, C. D. Brandt, and R. J. Nemanich, MRS Symposium Proceedings (Materials Research Society, Pittsburg, 1996), Vol. 423, p. 723.
    • (1996) MRS Symposium Proceedings , vol.423 , pp. 723
    • Khomich, A.V.1    Polyakov, V.I.2    Perov, P.I.3    Varnin, V.P.4    Teremetskaya, I.G.5    Balakirev, V.G.6    Obraztsova, E.D.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.