EPR and optical studies on polycrystalline diamond films grown by chemical vapor deposition and annealed between 1100 and 1900 K

Physical Review B - Condensed Matter and Materials Physics

Volumn 57, Issue 4, 1998, Pages 2302-2309

  Talbot Ponsonby, D ^a   Newton, M ^a   Baker, J ^a   Scarsbrook, G ^b   Sussmann, R ^b   Whitehead, A ^b  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b De Beers Industrial Diamonds (UK) Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001197805     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.2302     Document Type: Article

References (35)

1. K. M. McNamara, D. H. Levy, K. K. Gleason, and C. J. Robinson, Appl. Phys. Lett. 60, 580 (1992).
2. B. Dischler, C. Wild, W. Müller-Sebert, and P. Koidl, Physica B 185, 217 (1993).
3. K. McNamara, B. Williams, K. Gleason, and B. E. Scruggs, J. Appl. Phys. 76, 2466 (1994).
4. R. P. Chin, J. Y. Huang, Y. R. Shen, T. J. Chuang, H. Seki, and M. Buck, Phys. Rev. B 45, 1522 (1992).
5. H. Jia, J. Shinar, D. P. Lang, and M. Pruski, Phys. Rev. B 48, 17 595 (1993).
6. S. Mitra and K. K. Gleason, Diamond Relat. Mater. 2, 126 (1993).
7. D. Talbot-Ponsonby et. al Phys. Rev. B (to be published).
8. X. Zhou, G. Watkins, and K. McNamara-Rutledge, Mater. Sci. Forum 196-201, 825 (1996).
9. X. Zhou, G. Watkins, K. M. McNamara-Rutledge, R. P. Messmer, and Sanjay Chawla, Phys. Rev. B 54, 7881 (1996).
10. G. Davies and T. Evans, Proc. R. Soc. London, Ser. A 277, 413 (1972).
11. R. Samlenski, C. Haug, R. Brenn, C. Wild, and P. Koidl, Appl. Phys. Lett. 65, 2798 (1995).
12. W. Muller-Seber et. al Appl. Phys. Lett. 68, 759 (1996).
13. G. Cao et. al J. Appl. Phys. 79, 1357 (1996).
14. S. Jin and T. Moustakas, Appl. Phys. Lett. 65, 403 (1994).
15. W. V. Smith, P. P. Sorokin, I. L. Gelles, and G. J. Lasher, Phys. Rev. 115, 1546 (1959).
16. A. Cox, M. E. Newton, and J. M. Baker, J. Phys. C 6, 551 (1994).
17. P. R. Briddon and R. Jones, Physica B 185, 179 (1993).
18. S. A. Kajihara, A. Antonelli, and J. Bernholc, Phys. Rev. Lett. 66, 2010 (199X).
19. O. D. Tucker, M. E. Newton, and J. M Baker, Phys. Rev. B 50, 15 586 (1994).
20. P. B. Lukins and J. Khachan, Appl. Phys. Lett. 65, 3320 (1994).
21. C. F. O. Graeff, C. E. Nebel, M. Stutzmann, A. Flöter, and R. Zachai, J. Appl. Phys. 81, 234 (1997).
22. I. Watanabe and K. Sugata, Jpn. J. Appl. Phys., Part 1 27, 1808 (1988).
23. W. Zhang, F. Zhang, Q. Wu, and G. Chen, Mater. Lett. 15, 292 (1992).
24. M. Fanciulli and T. D. Moustakes, Phys. Rev. B 48, 14 982 (1993).
25. S. L. Holder, L. G. Rowan, and J. J. Krebs, Appl. Phys. Lett. 64, 1091 (1994).
26. D. Talbot-Ponsonby et. al J. Phys.: Condens. Matter 8, 837 (1996).
27. R. Chrenko, R. Tuft, and H. M. Strong, Nature (London) 270, 141 (1977).
28. A. T. Collins, J. Phys. C 13, 2641 (1980).
29. T. Evans and Z. Qi, Proc. R. Soc. London, Ser. A 381, 159 (1982).
30. G. Davies and M. F. Hamer, Proc. R. Soc. London, Ser. A 348, 285 (1976).
31. A. T. Collins, in Defects and Radiation Effects in Semiconductors, edited by R. R. Hasiguti, IOP Conf. Proc. No. 59 (Institute of Physics and Physical Society, London, 1981), p. 247.
32. S. Evans, in The Properties of Growth of Diamond, edited by G. Davies (Inspec, IEE, London, 1994), pp. 59-69.
33. Y. Misuda, T. Yamada, T. J. Chuang, and H. Seki, Surf. Sci. 257, L633 (1991).
34. R. E. Thomas, R. A. Rudder, and R. J. Markunas, J. Vac. Sci. Technol. A 10, 2451 (1992).
35. J. E. Butler and R. L. Woodin, Philos. Trans. R. Soc. London, Ser. A 342, 209 (1993).