The mechanism for the high-quality single-phase growth of MnSi films on Si (111) in the presence of Sb flux

Applied Physics Letters

Volumn 75, Issue 19, 1999, Pages 2894-2896

  Yan, Y ^a   Al Jassim, M M ^a   Matsuda, K ^b   Tatsuoka, H ^b   Kuwabara, H ^b   Pennycook, S J ^c  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b SHIZUOKA UNIVERSITY   (Japan)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001145192     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125182     Document Type: Article

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