Effect of Sb as a surfactant on the inner diffusion of epilayer Ge atoms into Si substrate

Thin Solid Films

Volumn 321, Issue 1-2, 1998, Pages 116-119

  Jiang, Zuimin ^a   Xu, Amei ^a   Hu, Dongzhi ^a   Zhu, Haijun ^a   Liu, Xiaohan ^a   Wang, Xingjun ^a   Mao, Mingchun ^a   Zhang, Xiangjiu ^a   Hu, Jihuang ^a   Huang, Daming ^a   Wang, Xun ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

Interdiffusion; Molecular beam epitaxy; Surfactant

Indexed keywords

DIFFUSION IN SOLIDS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MONOLAYERS; RAMAN SCATTERING; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GERMANIUM; SUBSTRATES; SURFACE ACTIVE AGENTS; TRANSMISSION ELECTRON MICROSCOPY;

EPILAYER GERMANIUM ATOMS;

SEMICONDUCTING SILICON;

EID: 0032066129     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00458-1     Document Type: Article

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