SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 346, Issue 1-3, 1996, Pages

Oxidation of hydrogen-passivated silicon surfaces induced by dissociative electron attachment to physisorbed H2O

(3) Klyachko, D a Rowntree, P a Sanche, L a

a UNIVERSITÉ DE SHERBROOKE (Canada)

Author keywords

Amorphous surfaces; Chemisorption; Electron bombardment; Molecule solid reactions; Silicon; Water

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL MODIFICATION; CHEMISORPTION; ELECTRONS; HYDROGEN; IRRADIATION; MOLECULES; OXIDATION; PASSIVATION; SILICON; WATER; X RAY PHOTOELECTRON SPECTROSCOPY;

DISSOCIATIVE ELECTRON ATTACHMENT; ELECTRON BOMBARDMENT; ELECTRON STIMULATED DESORPTION; MOLECULE SOLID REACTIONS; SEMICONDUCTOR SURFACE;

SURFACES;

EID: 0030084291 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/0039-6028(95)95066-4 Document Type: Article

Times cited : (37)

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