Buried word line planarization and roughness control for tunnel junction magnetic random access memory switching

Journal of Applied Physics

Volumn 87, Issue 9 III, 2000, Pages 6382-6384

  Sousa, R C ^a,b   Soares, V ^b   Silva, F ^b   Bernardo, J ^b   Freitas, P P ^b  

^a INSTITUTO SUPERIOR TÉCNICO   (Portugal)

^b INESC   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001051786     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372713     Document Type: Article

References (7)

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7. Y. Lu et al., J. Appl. Phys. 85, 5267 (1999).