|
|
Volumn 428, Issue , 1996, Pages 343-348
|
|
Transient photocurrent spectroscopy of trap levels in ultra-thin SiO2 films
a
a
NEC CORPORATION
(Japan)
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
ELECTRIC CURRENTS;
ELECTRON TUNNELING;
INTERFACES (MATERIALS);
MONOCHROMATORS;
MOS DEVICES;
PHOTONS;
SEMICONDUCTOR DIODES;
SILICA;
SILICON;
SPECTROSCOPY;
TRANSIENTS;
ULTRATHIN FILMS;
MONOCHROMATIC LIGHT IRRADIATION;
PHOTOACCESSIBLE TRAP DENSITY;
TRANSIENT PHOTOCURRENT SPECTROSCOPY;
SEMICONDUCTING FILMS;
|
|
EID: 0030420055
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-428-343 Document Type: Conference Paper |
|
Times cited : (1)
|
|
References (11)
|
