High pressure behavior of silicon clathrates: A new class of low compressibility materials

Physical Review Letters

Volumn 83, Issue 25, 1999, Pages 5290-5293

  San Miguel, A ^a   Keghelian P ^a   Blase, X ^a   Melinon P ^a   Perez, A ^a   Itie J P ^b   Polian, A ^b   Reny, E ^c   Cros, C ^c   Pouchard, M ^c  

^a UNIVERSITÉ LYON 1   (France)

^b SORBONNE UNIVERSITÉ   (France)

^c INST CHIM MATIERE COND BORDEAUX   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001000792     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.83.5290     Document Type: Article

References (28)

1. W. D. Sproul, Science, 273, 889 (1996).
2. T. Ishikawa, Y. Kohtoku, K. Kumagawa, T. Yamamura, and T. Nagasawa, Nature (London), 391, 773 (1998).
3. A. Y. Liu and M. L. Cohen, Science, 245, 841 (1989).
4. C. Cros, M. Pouchard, and P. Hagenmuller, Comput. Red. Acad. Sci., 260, 4764 (1965)
5. G. B. Adams, M. O’Keeffe, A. A. Demkov, O. F. Sankey, and Y.-M. Huang, Phys. Rev. B, 49, 8048 (1994).
6. P. Mélinon, P. Kéghélian, X. Blase, J. Le Brusq, A. Perez, E. Reny, C. Cros, and M. Pouchard, Phys. Rev. B, 58, 12-590 (1998).
7. P. Mélinon, P. Kéghélian, A. Perez, B. Champagnon, Y. Guyot, L. Saviot, E. Reny, C. Cros, M. Pouchard, and A. J. Dianoux, Phys. Rev. B, 59, 10-099 (1999).
8. R. Letoullec, J. P. Pinceaux, and P. Loubeyre, High Press. Res., 1, 77 (1988).
9. G. J. Piermarini, S. Block, J. D. Barnett, and R. A. Forman, J. Appl. Phys., 46, 2774 (1975)
10. M. I. McMahon and R. J. Nelmes, Phys. Rev. B, 47, 8337 (1993);
11. M. I. McMahon, R. J. Nelmes, N. G. Wright, and D. R. Allan, Phys. Rev. B, 50, 739 (1994).
12. J. Z. Hu, L. D. Merkle, C. S. Menoni, and I. L. Spain, Phys. Rev. B, 34, 4679 (1986).
13. F. P. Bundy and J. S. Kasper, High Temp.-High Press., 2, 429 (1970).
14. L. E. Sansores, I. A. Cetina, and Taguena Martinez, J. de Phys. (Paris), 42, 823 (1981).
15. D. Kahn and J. P. Lu, Phys. Rev. B, 56, 13-898 (1997).
16. D. M. Ceperley and B. J. Alder, Phys. Rev. Lett., 45, 566 (1980);
17. J. P. Perdew and A. Zunger, Phys. Rev. B, 23, 5048 (1981).
18. P. Hohenberg and W. Kohn, Phys. Rev., 136, B864 (1964);
19. W. Kohn and L. J. Sham, Phys. Rev., 140, A1133 (1965).
20. L. Kleinman and D. M. Bylander, Phys. Rev. Lett., 48, 1425 (1982);
21. N. Troullier and J. L. Martins, Solid State Commun., 74, 613 (1990).
22. L. Marques, M. Mezouar, J. L. Hodeau, N. Nunez-Reguero, N. R. Serederyanaya, V. A. Ivdenko, V. D. Blank, and G. A. Dubitsky, Science, 283, 1720 (1999).
23. C. Piskoti, J. Yarger, and A. Zettl, Nature (London), 393, 771 (1998);
24. M. Côte, J. C. Grossman, M. L. Cohen, and S. G. Louie, Phys. Rev. Lett., 81, 697 (1998).
25. M. L. Cohen, Phys. Rev. B, 32, 7988 (1985).
26. A. P. Sutton, Electronic Structure of Materials (Clarendon, Oxford,1993).
27. P. K. Lam, M. L. Cohen, and G. Martinez, Phys. Rev. B, 35, 9190 (1987).
28. S. Saito and A. Oshiyama, Recent Advances in the Physics and Chemistry of Fullerenes and Related Materials, K. M. Kadish and R. S. Ruoff (Electrochemical Society, Pennington, NJ,1996), Vol. 3, p. 457.