Biased percolation and electrical breakdown

Semiconductor Science and Technology

Volumn 12, Issue 9, 1997, Pages 1057-1063

  Pennetta, C ^a   Gingl, Z ^b   Kiss, L B ^c   Reggiani, L ^d  

^a UNIVERSITY OF SALENTO   (Italy)

^b UNIVERSITY OF SZEGED   (Hungary)

^c UPPSALA UNIVERSITY   (Sweden)

^d INFM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001000140     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/9/001     Document Type: Article

References (34)

1. Yagil Y, Deutscher G and Bergman D J 1993 Int. J. Mod. Phys. B 7 3353
2. Baccarani G and Rudan M (ed) 1996 ESSDERC 96 - 26th European Solid State Device Research Conf. (Bologna, September 1996) (Gif-sur-Yvette: Editions Frontières)
3. Howes M J and Morgan D V 1981 Reliability and Degradation - Semiconductor Devices and Circuits (New York: Wiley)
4. Bareikis V and Katilius R 1995 Noise in Physical Systems and 1/f fluctuations (Singapore: World Scientific) pp 573-625
5. Chen T M and Yassine A M 1994 IEEE Trans. Electron Devices 41 2165
6. Vandamme L K J 1994 IEEE Trans. Electron Devices 41 2176
7. Jones B K and Xu Y Z 1995 Rev. Sci. Instrum. 66 4676
8. Jones B K and Xu Y Z 1993 Microelectron. Reliability 33 1829
9. Jones B K, Xu Y Z, Denton T C and Zobbi P 1995 Microelectron. Reliability 35 13
10. Dagge K, Frank W, Seeger A and Stoll H 1996 Appl. Phys. Lett. 68 1198
11. Koch R H, Laibowitz R B, Alessandrini E I and Viggiano J M 1985 Phys. Rev. B 32 6932
12. Dubson M A, Hui Y C, Weissman M B and Garland J C 1989 Phys. Rev. B 39 6807
13. Yagil Y and Deutscher G 1992 Phys. Rev. B 46 16 115
14. Yagil Y, Deutscher G and Bergman D J 1992 Phys. Rev. Lett. 69 1423
15. Wu K and Bradley R M 1994 Phys. Rev. B 50 12 468
16. Lust L M and Kakalios J 1995 Phys. Rev. Lett. 75 2192
17. Seidler G T, Solin S A and Marley AC 1996 Phys. Rev. Lett. 76 3049
18. Shimakawa K, Kondo A, Goto M and Long A R 1996 J. Non-Crystalline Solids 198 157
19. Celzard A, McRae E, Mareche J F, Furdin G, Dufort M and Deleuze C 1996 J. Phys. Chem. Solids 57 715
20. Ferre-Pikal E S, Walls F L, Vig J R and Garcia Nava J F 1996 Proc. 1996 IEEE Int. Frequency Control Symp. (New York: IEEE) p 844
21. Tkachenko N N 1996 Diffusion and Defect Data Part B (Solid State Phenom.) 51 391
22. Brandt M, Krozer V, Schussler M and Bock K H 1996 Microelectron. Reliability 36 1891
23. Chen X Y and Leys M R 1996 Solid State Electron. 39 1149
24. Ouacha H, Nur O, Willander M and Fu Y 1996 Appl. Phys. Lett. 69 2382
25. Gingl Z, Pennetta C, Kiss L B and Reggiani L 1996 Semicond. Sci. Technol. 11 1770
26. Stauffer D and Aharony A 1992 Introduction to Percolation Theory (London: Taylor and Francis)
27. Rammal R, Tannous C and Tremblay A M S 1985 Phys. Rev. A 31 2662
28. Rammal R, Tannous C, Breton P and Tremblay A M S 1985 Phys. Rev. Lett. 54 1718
29. Kiss L B and Svedlindh P 1993 Phys. Rev. Lett. 71 2817
30. Söderberg M 1987 Phys. Rev. B 35 352
31. Sornette D and Vanneste C 1992 Phys. Rev. Lett. 68 612
32. Batrouni G G, Hansen A and Larson B 1996 Phys. Rev. E 53 2292
33. Hooge F N, Kleinpenning T G M and Vandamme L K J 1981 Rep. Prog. Phys. 44 479
34. Weissman M B 1988 Rev. Mod. Phys. 60 537