SCOPUS 정보 검색 플랫폼

Volumn 159, Issue 1-4, 1996, Pages 289-292

Novel results on compensation processes in ZnSe:N

(10) Kurtz, E a Nurnberger J a Jobst, B a Baumann, H b Kuttler, M c Einfeldt, S a,d Hommel, D a,d Landwehr, G a Bethge, K b Bimberg, D c

a UNIVERSITY OF WÜRZBURG (Germany)

b GOETHE UNIVERSITY (Germany)

c TECHNISCHE UNIVERSITÄT BERLIN (Germany)

d UNIVERSITY OF BREMEN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; EXCITONS; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SUBSTRATES;

ACCEPTOR; COMPENSATION PROCESSES; DONOR; HOLE CONCENTRATION; NUCLEAR REACTION ANALYSIS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030562219 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(96)80024-8 Document Type: Article

Times cited : (12)

References (12)

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