Efficient doping of nitrogen with high activation ratio into ZnSe using a high-power plasma source

Applied Physics Letters

Volumn 70, Issue 1, 1997, Pages 81-83

  Kimura, K ^a,b,f   Miwa, S ^a,b,g   Yasuda, T ^a,c   Kuo, L H ^a,b   Jin, C G ^a,d   Tanaka, K ^a,c,d   Yao, T ^a,b,e  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b Angstrom Technology Partnership   (Japan)

^c NATL INST FOR ADV INTERDISC RES   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

^e TOHOKU UNIVERSITY   (Japan)

^f SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

^g SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009180571     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119314     Document Type: Article

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