Ion channeling study of cavities in silicon formed by He implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 379-382

  Moons, R ^a   Deweerd, W ^a   Pattyn, H ^a   Vantomme, A ^a   Langouche, G ^a  

^a KU LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DESORPTION; HELIUM; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

CHANNELING SPECTROMETRY; ION CHANNELING;

SEMICONDUCTING SILICON;

EID: 0031547686     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00961-5     Document Type: Article

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