Dual-wavelength laser by selective intermixing of GaAs/AlGaAs quantum wells

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2683, Issue , 1996, Pages 2-7

  Sun, D ^a   Beemink, K J ^a   Thornton, R L ^a   Treat, D W ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

Annealing; Diffusion; Intermixing; Multiwavelength; Quantum well; Semiconductor lasers

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; ANNEALING; DIFFUSION; FABRICATION; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MIXING; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SILICON;

BROAD-AREA LASERS; DUAL WAVELENGTH LASER; EXTERNAL QUANTUM EFFICIENCY; GAAS/ALGAAS QUANTUM WELL; INTERMIXING; MULTI-WAVELENGTH LASERS; MULTIWAVELENGTH; SELECTIVE INTERMIXING;

QUANTUM WELL LASERS;

EID: 58749092264     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.237674     Document Type: Conference Paper

References (6)

1. A. B. Piccirilli, N. K. Dutta, L. A. Greuzka, R. F. Karlicek, and J. D. Wynn, "GalnAsP dual wavelength laser", Electron. Letters. 24, pp. 1565-1566, 1988.
2. K. J. Beernink, R. L. Thornton, and H. F. Chung, "Low threshold current dual wavelength planar buried heterostructure lasers with close spatial and large spectral separation", Appl. Phys. Lett. 64, pp. 1082-1084, 1994.
3. K. J. Beernink, R. L. Thornton, and G. B. Anderson, and M. A. Emanuel, "Si diffusion and intermixing in AlGaAs/GaAs structures using buried impurity sources", Appl. Phys. Lett. 66, pp. 2522-2524, 1995.
4. D. G. Deppe and N. Holonyak, Jr., "Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures", J. Appl. Phys. 64, R93-R113, 1988.
5. R. L. Thornton, W. J. Mosby, R. M. Donaldson, and T. L. Paoli, "Properties of closely spaced independently addressable lasers fabricated by impurity-induced disordering", Appl. Phys. Lett. 56, pp. 1623-1625, 1990.
6. D. G. Deppe, N. Holonyak, Jr., K. C. Hsieh, P. Gavrilovic, W. Stutius, and J. Williams, "Layer interdiffusion in Se-doped AlGaAs-GaAs superlattices", Appl. Phys. Lett. 51, pp. 581-583, 1987.