Crystallinity improvement of epitaxial CeO2 films by high-energy ion irradiation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 166-169

  Satoh, Masataka ^a   Yamamoto, Yasuhiro ^a   Inoue, Tomoyasu ^b  

^a HOSEI UNIVERSITY   (Japan)

^b IWAKI MEISEI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CARBON; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; DOSIMETRY; EPITAXIAL GROWTH; FILM GROWTH; ION BOMBARDMENT; OXYGEN; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS;

CESIUM DIOXIDES; CRYSTALLINITY; ELECTRONIC DEPOSITION ENERGY; NUCLEAR DEPOSITION ENERGY;

CERIUM COMPOUNDS;

EID: 0031547947     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)01114-7     Document Type: Article

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