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Volumn 36, Issue 2 PART A, 1997, Pages

Thermal decomposition of CeO2 in ultra high vacuum as a cause of polycrystalline growth of Si films on epitaxial CeO2/Si

Author keywords

CeO2; Epitaxial growth; Si deposition; Thermal decomposition

Indexed keywords

CERIUM COMPOUNDS; EPITAXIAL GROWTH; MASS SPECTROMETRY; POLYCRYSTALLINE MATERIALS; PYROLYSIS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; VACUUM APPLICATIONS;

EID: 0031072478     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l133     Document Type: Article
Times cited : (10)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.