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Volumn 36, Issue 2 PART A, 1997, Pages
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Thermal decomposition of CeO2 in ultra high vacuum as a cause of polycrystalline growth of Si films on epitaxial CeO2/Si
a a a,c a b |
Author keywords
CeO2; Epitaxial growth; Si deposition; Thermal decomposition
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Indexed keywords
CERIUM COMPOUNDS;
EPITAXIAL GROWTH;
MASS SPECTROMETRY;
POLYCRYSTALLINE MATERIALS;
PYROLYSIS;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SEMICONDUCTING SILICON;
VACUUM APPLICATIONS;
CHANNELING TECHNIQUE;
RESIDUAL GAS ANALYSIS;
SEMICONDUCTING FILMS;
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EID: 0031072478
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.36.l133 Document Type: Article |
Times cited : (10)
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References (13)
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