Observation of metastable defect in electron irradiated 6H-SiC

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 561-564

  Hemmingsson, C G ^a   Son, N T ^a   Kordina, O ^a,c   Lindstrom J L ^b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

DLTS; Electron Irradiation; Metastability; SiC; Transition Probability

Indexed keywords

ANNEALING; CAPACITANCE; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRANSITIONS; IONIZATION OF SOLIDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

CAPACITANCE TRANSIENT METHOD; ELECTRON IRRADIATION; THERMAL IONIZATION ENERGY;

SILICON CARBIDE;

EID: 0031649876     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.561     Document Type: Article

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