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Volumn 79, Issue 11, 1996, Pages 8682-8687

Photoluminescence excitation spectroscopy of GaAs:Er,O in the near-band-edge region

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000997278     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362494     Document Type: Review
Times cited : (36)

References (12)
  • 7
    • 85032997675 scopus 로고    scopus 로고
    • unpublished data
    • K. Takahei (unpublished data).
    • Takahei, K.1
  • 9
    • 85033025850 scopus 로고    scopus 로고
    • private communication
    • A. Dörnen (private communication).
    • Dörnen, A.1
  • 10
    • 0029521542 scopus 로고
    • Proceedings of the 18th International Conference on Defects in Semiconductors
    • Sendai, July 23-28, 1995
    • X. Z. Wang and B. Wessels, Proceedings of the 18th International Conference on Defects in Semiconductors, Sendai, July 23-28, 1995 (Materials Science Forum, 1995), Vols. 196-201, pp. 663-668.
    • (1995) Materials Science Forum , vol.196-201 , pp. 663-668
    • Wang, X.Z.1    Wessels, B.2
  • 12
    • 6244294989 scopus 로고
    • Proceedings of the 18th International Conference on Defects in Semiconductors
    • Sendai, July 23-28, 1995
    • A. Taguchi and K. Takahei, Proceedings of the 18th International Conference on Defects in Semiconductors, Sendai, July 23-28, 1995 (Materials Science Forum, 1995), Vols. 196-201, pp. 633-638.
    • (1995) Materials Science Forum , vol.196-201 , pp. 633-638
    • Taguchi, A.1    Takahei, K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.