Photoluminescence excitation spectroscopy of GaAs:Er,O in the near-band-edge region

Journal of Applied Physics

Volumn 79, Issue 11, 1996, Pages 8682-8687

  Hogg, R A ^a   Takahei, K ^a   Taguchi, A ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000997278     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362494     Document Type: Review

References (12)

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