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Volumn 74, Issue 24, 1999, Pages 3687-3689

Analysis of contamination, hydrogen emission, and surface temperature variations using real time spectroscopic ellipsometry during p/i interface formation in amorphous silicon p-i-n solar cells

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000706008     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123230     Document Type: Article
Times cited : (8)

References (18)
  • 11
    • 0003044390 scopus 로고
    • edited by J. D. Joannopoulos and G. Lucovsky Springer, Berlin
    • L. Ley, in The Physics of Hydrogenated Amorphous Silicon II, edited by J. D. Joannopoulos and G. Lucovsky (Springer, Berlin, 1984), Vol. 56, p. 61.
    • (1984) The Physics of Hydrogenated Amorphous Silicon II , vol.56 , pp. 61
    • Ley, L.1
  • 13
    • 84982788451 scopus 로고    scopus 로고
    • G. E. Jellison, Jr. and F. A. Modine, Appl. Phys. Lett. 69, 371 (1996); 69, 2137 (1996).
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 2137


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.