A study of surface reactions during the growth of B-doped a-Si:H using the intermittent deposition technique

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 999-1002

  Kamei, Toshihiro ^a   Hata, Nobuhiro ^a   Matsuda, Akihisa ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC DISCHARGES; ENERGY GAP; FILM GROWTH; HYDROGENATION; SURFACE PHENOMENA;

INTERMITTENT DEPOSITION TECHNIQUE; MECHANICAL SHUTTER; OPTICAL GAP; WAITING TIME;

AMORPHOUS SILICON;

EID: 0030563367     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00021-X     Document Type: Article

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