Temperature variation of nonradiative carrier recombination processes in high-quality CuGaSe2 thin films grown by molecular beam epitaxy

Applied Physics Letters

Volumn 77, Issue 2, 2000, Pages 259-261

  Yoshino, Kenji ^a   Maruoka, Daisuke ^a   Ikari, Tetsuo ^a   Fons, Paul J ^b   Niki, Shigeru ^b   Yamada, Akimasa ^b  

^a UNIVERSITY OF MIYAZAKI   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000562968     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126943     Document Type: Article

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