Temperature dependence of photoacoustic spectra in CuInSe2 thin films grown by molecular beam epitaxy

Solar Energy Materials and Solar Cells

Volumn 50, Issue 1-4, 1998, Pages 127-132

  Yoshino, K ^a   Shimizu, T ^a   Fukuyama, A ^a   Maeda, K ^a   Fons, P J ^b   Yamada, A ^b   Niki, S ^b   Ikari, T ^a  

^a UNIVERSITY OF MIYAZAKI   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

CuInSe2; Photoacoustic; PZT

Indexed keywords

COMPOSITION; COPPER COMPOUNDS; ENERGY GAP; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHOTOACOUSTIC SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; TEMPERATURE;

PIEZOELECTRIC PHOTOACOUSTIC MEASUREMENTS; SUBSTRATE TEMPERATURE;

THIN FILMS;

EID: 0031675576     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(97)00133-5     Document Type: Article

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