Growth of CuGaSe2 film by molecular beam epitaxy

Microelectronics Journal

Volumn 27, Issue 1, 1996, Pages 53-58

  Yamada, Akimasa ^a   Makita, Yunosuke ^a   Niki, Shigeru ^a   Obara, Akira ^a   Fons, Paul ^a   Shibata, Hajime ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; EPITAXIAL GROWTH; EXCITONS; LOW TEMPERATURE PHENOMENA; MICROANALYSIS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; STOICHIOMETRY; X RAY DIFFRACTION;

CHALCOPYRITE STRUCTURE; ELECTRON PROBE; EXCITON RECOMBINATION; MOLECULARITY; VALENCE STOICHIOMETRY;

FILM GROWTH;

EID: 0030080709     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2692(95)00076-3     Document Type: Article

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