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Journal of Applied Physics

Volumn 80, Issue 7, 1996, Pages 3844-3853

Majority and minority electron and hole mobilities in heavily doped gallium aluminum arsenide

(1) Bennett, Herbert S a

a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001236453 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.363339 Document Type: Article

Times cited : (19)

References (39)

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