Electrical and optical properties of Be doped InP grown at low temperature by solid source atomic layer molecular beam epitaxy

Journal of Applied Physics

Volumn 85, Issue 9, 1999, Pages 6567-6570

  Postigo, P A ^a,b   Dotor, M L ^a   Huertas, P ^a   Garcia F ^a   Golmayo, D ^a   Briones, F ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; CARRIER MOBILITY; CRYSTAL DEFECTS; ELECTRON TRANSITIONS; FILM GROWTH; HALL EFFECT; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; STOICHIOMETRY;

ATOMIC LAYER EPITAXY; HALL MOBILITY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032621270     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370503     Document Type: Article

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