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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 981-984

Molecular beam epitaxial growth of InP using a valved phosphorus cracker cell: Optimization of electrical, optical and surface morphology characteristics

(5) Yoon, Soon Fatt a Zheng, Hai Qun a Zhang, Peng Hua a Mah, Kia Woon a Ng, Geok Ing a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

Indium phosphide; Molecular beam epitaxy; Valved phosphorus cracker cell

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; HALL EFFECT; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SURFACES; TEMPERATURE;

CRACKING ZONE TEMPERATURE; ELECTRON CONCENTRATION; ELECTRON MOBILITY; VALVED PHOSPHORUS CRACKER CELL;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032673983 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.981 Document Type: Article

Times cited : (5)

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