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Volumn 35, Issue 6 SUPPL. B, 1996, Pages 3710-3713
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Theoretical study of current and barrier height between aluminum tip and silicon surface in scanning tunneling microscopy
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Author keywords
Aluminum; Electronic state under finite field and current; First principles electronic state theory; Recursion transfer matrix method; Scanning tunneling microscopy; Silicon
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Indexed keywords
ALUMINUM;
CALCULATIONS;
CURRENT DENSITY;
ELECTRIC FIELDS;
ELECTRODES;
ELECTRONIC STRUCTURE;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING SILICON;
SURFACES;
ALUMINUM TIP;
ATOMIC SCALE CURRENT DISTRIBUTION;
BARRIER HEIGHT;
BIELECTRON SYSTEM;
FIRST PRINCIPLE ELECTRONIC STATE THEORY;
MICROSCOPIC ELECTRONIC STATES;
POTENTIAL BARRIER;
RECURSION TRANSFER MATRIX METHOD;
ELECTRONIC DENSITY OF STATES;
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EID: 0030171818
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.35.3710 Document Type: Article |
Times cited : (18)
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References (14)
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