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Volumn 35, Issue 6 SUPPL. B, 1996, Pages 3710-3713

Theoretical study of current and barrier height between aluminum tip and silicon surface in scanning tunneling microscopy

Author keywords

Aluminum; Electronic state under finite field and current; First principles electronic state theory; Recursion transfer matrix method; Scanning tunneling microscopy; Silicon

Indexed keywords

ALUMINUM; CALCULATIONS; CURRENT DENSITY; ELECTRIC FIELDS; ELECTRODES; ELECTRONIC STRUCTURE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACES;

EID: 0030171818     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3710     Document Type: Article
Times cited : (18)

References (14)
  • 10
    • 85088545174 scopus 로고    scopus 로고
    • note
    • 3/3 = 1/p, where p is the average density.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.