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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 10 SUPPL. B, 1996, Pages

Proproperty change of Si(111) surface by scanning tunneling microscope manipulation

(5) Heike, Seiji a Hashizume, Tomihiro a Watanabe, Satoshi a Lutwyche, Mark I a Wada, Yasuo a

a HITACHI LTD (Japan)

Author keywords

Manipulation; Silicon; STM; Surface; Tip

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; ELECTRIC CURRENTS; SCANNING TUNNELING MICROSCOPY; SURFACE PHENOMENA; SURFACE PROPERTIES; SURFACE TREATMENT;

SURFACE MODIFICATION; TUNNELING CURRENT;

SEMICONDUCTING SILICON;

EID: 0030261331 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.l1367 Document Type: Article

Times cited : (2)

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